Cd doping at the CuInSe2 ÕCdS heterojunction
نویسندگان
چکیده
The chemical composition of the CuInSe2 /CdS heterojunction interface is investigated by angle resolved x-ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy in combination with selective etching of CdS. We demonstrate that ;0.8 monolayer of Cd is incorporated into the first 1–3 atomic layers of the CuInSe2 . This is accompanied by significant Cu depletion with respect to In in the same region. The results suggest that CdCu defects heavily dope CuInSe2 surface n type and cause the observed large band bending on the CuInSe2 side of the heterojunction. © 2003 American Institute of Physics. @DOI: 10.1063/1.1570500#
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